Product Details for Material from Fairchild/ON Semiconductor - FDD86110 - MOSFET N-CH 100V 12.5A DPAK-3 N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252AA)

FDD86110 Fairchild/ON Semiconductor MOSFET N-CH 100V 12.5A DPAK-3 N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252AA)

Part Nnumber
FDD86110
Description
MOSFET N-CH 100V 12.5A DPAK-3 N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252AA)
Producer
Fairchild/ON Semiconductor
Basic price
1,01 EUR

The product with part number FDD86110 (MOSFET N-CH 100V 12.5A DPAK-3 N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252AA)) is from company Fairchild/ON Semiconductor and distributed with basic unit price 1,01 EUR. Minimal order quantity is 2.5 pc, Approx. production time is 84 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Fairchild/ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2265pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3.1W (Ta), 127W (Tc) Rds On (Max) @ Id, Vgs 10.2 mOhm @ 12.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63


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(keyword FDD86110 Fairchild/ON Semiconductor MOSFET N-CH 100V 12.5A DPAK-3 N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252AA))
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